Semiconductor memory device

ABSTRACT

A semiconductor memory device is provided for minutely changing a refresh interval according to a detected temperature and thereby lowering its power consumption. A temperature detector detects a temperature of a chip and outputs the corresponding temperature signal. A reference temperature signal output unit outputs the corresponding reference temperature signal with each of different reference temperatures to be compared with the chip temperature according to a selection signal. A temperature comparison unit compares the chip temperature with the reference temperature through the temperature signal and the reference temperature signal. A selection signal output unit outputs the selection signal according to the compared result of the temperature comparison unit. A refresh interval control unit changes the refresh interval according to the compared result of the temperature comparison unit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefits of priority fromthe prior Japanese Patent Application No. 2005-044895, filed on Feb. 22,2005, the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

(1) Field of the Invention

The present invention relates to a semiconductor memory device, and moreparticularly to a semiconductor memory device which is arranged toperform a refresh operation for holding data stored therein.

(2) Description of the Related Art

For memory devices provided in portable appliances such as cellularphones, conventionally, SRAMs have been mainly used. Today, however, theincrease of a necessary memory capacity results in requiring alarge-capacity memory like a DRAM for such portable appliances. Theshortcoming involved in the use of such a large-capacity memory is alife of a cell used in a portable appliance.

Though the SRAM hardly consumes electric power for holding data, theDRAM is required to periodically perform a refresh operation for holdingdata. It means that the DRAM consumes a certain amount of electric powereven when it stays on standby. That is, even when the portable applianceis not used, the DRAM consumes electric power for holding data, whichleads to consuming up the power stored in a backup cell.

In order to solve this shortcoming, it is just necessary to reduce thetimes of the refresh operation on standby, for reducing the powerconsumption. For example, the data holding time of the DRAM ischaracterized to be longer as the temperature becomes lower. Hence, whenthe ambient temperature is lower than a specific reference temperature,the interval between the refresh operation is set to be longer, forreducing the times of the refresh operation.

FIG. 12 shows relation between a data holding time and a temperature. InFIG. 12, a waveform W11 denotes the temperature dependency of the dataholding time of a DRAM cell, while a waveform W12 denotes an intervalbetween the refresh operation of the DRAM cell. The time on the axis ofordinance is denoted on a log scale. As indicated by the waveform W11,the DRAM cell has a longer data holding time as the temperature becomeslower. Hence, as indicated by the waveform W12, when the temperature ofthe chip is lower than a predetermined reference temperature Tth, theinterval between the refresh operation is set to be longer, while whenthe temperature of the chip is higher than the reference temperatureTth, the interval between the refresh operation is set to be shorter.This setting makes it possible to reduce the power consumption.

FIG. 13 is a block diagram showing a control circuit for controlling theinterval between the refresh operation shown in FIG. 12. As shown inFIG. 13, the control circuit includes a reference level circuit 101, atemperature detector 102, a frequency division controller 103, a ringoscillator 104, and a frequency divider 105.

The reference level circuit 101 operates to output a constant referencevoltage that does not depend upon the variations of a temperature and apower supply. The temperature detector 102 operates to compare thereference voltage supplied from the reference level circuit 101 with avoltage changing in dependency on the temperature and then output thecompared result to the frequency division controller 103. That is, thetemperature detector 103 determines if the temperature of the chip (thatis, the DRAM cell) is higher or lower than the reference temperature.The frequency division controller 103 controls a frequency dividingratio of the frequency divider 105 according to the determined resultsent from the temperature detector 102. For example, when thetemperature detector 102 determines that the temperature of the chip islower than the reference temperature, the frequency division controller103 controls the frequency divider so that the frequency dividing ratiomay be larger. When the temperature detector 102 determines that thetemperature of the chip is higher than the reference temperature, thefrequency division controller 103 controls the frequency divider 105 sothat the frequency dividing ratio may be smaller.

The ring oscillator 104 is composed of inverters 104 a to 104 e. Theoscillating signal generated by the inverters 104 a to 104 e isoutputted to the frequency divider 105 through the inverter 104 f. Thefrequency divider 105 is composed of flip-flops 105 a to 105 e. Thefrequency divider 105 counts based on the oscillating signal sent fromthe ring oscillator 104 and outputs a refresh request signal when thecount reaches a predetermined value. The frequency divider 105 maychange its frequency dividing ratio under the control of the frequencydivision controller 103. The refresh request signal is outputted to therefresh circuit. In response to the signal, the refresh circuit operatesto refresh the data stored in the DRAM cell.

FIG. 14 is a circuit diagram showing the reference level circuit shownin FIG. 13. As shown in FIG. 14, the reference level circuit 101 dividesthe voltage VRFV that does not depend upon the variations of thetemperature and the power supply through the use of resistors R101 andR102 and then outputs the resulting reference voltage vref.

FIG. 15 is a circuit diagram showing the temperature detector shown inFIG. 13. As shown in FIG. 15, the temperature detector 102 is composedof inverters 111, 112, PMOS transistors M101 to M105, NMOS transistorsM106 to M108, a resistor R111, and a diode D101.

When a temperature detection enable signal detenz is at the H (High)level, the temperature detector 102 operates to compare the referencevoltage vref with a monitor voltage vmoni at a contact point between thediode D101 and the resistor R111 and to output the compared result asthe temperature detection signal detectz through the inverter 112. Thethreshold value of the diode D101 changes in dependency upon thetemperature and the monitor voltage vmoni is lower as the temperature ishigher.

When the monitor voltage vmoni is higher than the reference voltagevref, that is, the temperature of the chip is lower than the referencetemperature, the temperature detector 102 outputs the temperaturedetection signal detectz at the H level. When the monitor voltage vmoniis lower than the reference voltage vref, that is, the temperature ofthe chip is higher than the reference temperature, the temperaturedetector 102 outputs the temperature detection signal detectz at the L(Low) level. The temperature detection signal detectz is outputted tothe frequency divider 105. Then, the frequency divider 105 changes thefrequency dividing ratio in dependency upon the state of thistemperature detection signal detectz.

FIG. 16 is an explanatory view showing the operation of the temperaturedetector shown in FIG. 15. In FIG. 16A shows relation between thereference voltage vref and the monitor voltage vmoni. FIG. 16B shows thevoltage of the output (the drain of a transistor M106) of a differentialamplifier composed of transistors M103, M104 and M106 to M108. FIG. 16Cshows the voltage of the temperature detection signal detectz.

As shown in FIG. 16A, when the monitor voltage vmoni is higher than thereference voltage vref, the differential amplifier outputs the signal atthe L state as shown in FIG. 16B. This signal is inverted by theinverter 112 so that the signal may be changed into the temperaturedetection signal detectz at the H level as shown in FIG. 16C. Further,as shown in FIG. 16A, when the monitor voltage vmoni is lower than thereference voltage vref, the differential amplifier outputs the signal atthe H level as shown in FIG. 16B. This signal is inverted by theinverter 112 so that this signal may be changed into the temperaturedetection signal detectz at the L level as shown in FIG. 16C.

Further, there has been proposed a semiconductor device provided with atemperature detection function of optimizing the operating stateaccording to the predetermined detection temperature. (see JapaneseUnexamined Patent Publication No. 2003-132678.) Further, there has beenproposed a temperature detection circuit arranged to calibrate a varietyin manufacture, optimize the refresh interval according to the operatingtemperature, and reduce the power consumption. (see Japanese UnexaminedPatent Publication No. 2000-55742.)

As shown in FIG. 12, however, only one reference temperature is providedfor changing the interval between the refresh operation. Hence, thosecircuits involve a shortcoming that a large interval takes place betweenthe data holding time of the DRAM cell and the refresh interval and thusthe efficiency of lowering the power consumption is made lower.

SUMMARY OF THE INVENTION

In view of the foregoing, it is an object of the present invention toprovide a semiconductor memory device which is arranged to have aplurality of reference temperatures and minutely change the refreshinterval according to the compared result between a detected temperatureand each of those reference temperatures, for the purpose of reducingthe power consumption thereof.

To accomplish the above object, the present invention provides asemiconductor memory device that is arranged to perform a refreshoperation for holding data stored therein. The semiconductor memorydevice includes a temperature detector unit for detecting a temperatureand outputting a temperature signal, a reference temperature signaloutput unit for outputting reference temperatures signals according to aselection signal, the reference temperature signals corresponding to aplurality of difference reference temperatures to be compared with thetemperature of the chip, a temperature comparator unit for comparing thedetected temperature with the reference temperature through thetemperature signal and the reference temperature signal, a selectionsignal output unit for outputting the selection signal according to thecompared result, and a refresh interval control unit for changing therefresh interval according to the compared result.

The above and other objects, features and advantages of the presentinvention will become apparent from the following description when takenin conjunction with the accompanying drawings which illustrate preferredembodiments of the present invention by way of example.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing a summary of refresh interval controlto be executed in a semiconductor memory device.

FIG. 2 is a block diagram showing a system arrangement of refreshinterval control to be executed in the semiconductor memory device.

FIG. 3 is a graph showing relation between temperature dependency of adata holding time and a refresh interval time in a DRAM realized by thesystem shown in FIG. 2.

FIG. 4 is a block diagram showing refresh interval control of thesemiconductor memory device shown in FIG. 2 in detail.

FIG. 5 is a circuit diagram showing a reference level circuit in detail.

FIG. 6 is a circuit diagram showing a temperature detector in detail.

FIG. 7 is a circuit diagram showing a detection temperature latchcircuit in detail.

FIG. 8 is a circuit diagram showing a detection temperature selector indetail.

FIG. 9 illustrates relation among a detection temperature signal, adetection temperature latch signal, and a signal state of a node N1.

FIG. 10 is a circuit diagram showing a control signal generator.

FIG. 11 is a timing chart of FIG. 4.

FIG. 12 is a chart showing relation between a data holding time and atemperature.

FIG. 13 is a block diagram showing a control circuit for controlling aninterval between the refresh operation shown in FIG. 12;

FIG. 14 is a circuit diagram showing a reference level circuit shown inFIG. 13;

FIG. 15 is a circuit diagram showing a temperature detector shown inFIG. 13; and

FIGS. 16A, 16B and 16C are explanatory views of the operation of thetemperature detector shown in FIG. 15, in which FIG. 16A shows relationbetween a reference voltage and a monitor voltage, FIG. 16B shows theoutput voltage of a differential amplifier composed of transistors, andFIG. 16C shows the voltage of the temperature detection signal.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments of the present invention will be described belowwith reference to the accompany drawings.

FIG. 1 illustrates the summary of the refresh interval control to beexecuted in the semiconductor memory device. As shown in FIG. 1, thesemiconductor memory device includes a temperature detector unit 1, areference temperature signal output unit 2, a temperature comparatorunit 3, a selection signal output unit 4, and a refresh interval controlunit 5.

The temperature detector unit 1 detects the temperature of a chip andthen outputs a temperature signal t. The reference temperature signaloutput unit 2 outputs the corresponding reference temperature signal tbwith each of different reference temperatures to be compared with thetemperature of the chip in response to the selection signal s. Thetemperature comparator unit 3 compares the temperature of the chip withthe reference temperature through the temperature signal t and thereference temperature signal tb.

The selection signal output unit 4 outputs the selection signal saccording to the compared result of the temperature comparator unit 3.For example, when the detected chip temperature is lower than thereference temperature, the selection signal output unit 4 selectivelyoutputs the selection signal s so that the reference temperature signaloutput unit 2 may output the corresponding reference temperature signaltb with the reference temperature being lower by one temperature step(simply referred to as one step). On the other hand, when the detectedchip temperature is higher than the reference temperature, the selectionsignal output unit 4 selectively outputs the selection signal s so thatthe reference temperature signal output unit 2 may output thecorresponding reference temperature signal tb with the referencetemperature being higher by one step.

The refresh interval control unit 5 changes the refresh intervalaccording to the compared result of the temperature comparator unit 3.Since a plurality of reference voltages to be compared by thetemperature comparator unit 3 are provided, a plurality of refreshintervals are provided accordingly. Hence, the refresh interval may bechanged in detail. In the case of selecting a higher referencetemperature, the refresh interval is adjusted to be shorter than theinterval provided in the case of selecting the lower referencetemperature.

As described above, the reference temperature to be compared with thedetected chip temperature may be changed according to the comparedresult, and the refresh interval may be changed in detail according tothe compared result between the changed reference temperature and thedetected chip temperature. These changes make it possible to reduce theinterval between the data holding time and the refresh interval, therebybeing able to reduce the power consumption.

In turn, the embodiments of the present invention will be described indetail with reference to the drawings.

FIG. 2 illustrates an exemplary system arrangement of the refreshinterval control to be executed in the semiconductor memory device. Thekinds of signals to be inputted to and outputted from the circuits willbe briefly described with reference to FIG. 2. As shown, thesemiconductor memory device includes a reference level circuit 10, atemperature detector 20, a detection temperature latch circuit 30, adetection temperature selector 40, a frequency dividing number selector50, and a frequency divivision controller 60. These circuits are formedon the same semiconductor chip as the DRAM cell so that those circuitsmay control the refresh interval of the DRAM cell according to thetemperature.

The reference level circuit 10 is supplied with a voltage VRFV that doesnot depend upon the variations of the temperature and the power supply.Further, the combination of the reference level circuits 10 is inputtedwith detection temperature selection signals selx1 to selxm and selz1 toselzm (each group of which has m signals). The detection temperatureselection signals selx1 to selxm are paired with the other temperatureselection signals selz1 to selzm. For example, when the detectiontemperature selection signal selx1 is at the H level, the detectiontemperature selection signal selz1 is at the L level. The referencelevel circuit 10 generates m reference voltages vref which are differentvoltage and outputs one reference voltage vref according to thedetection temperature selection signals selx1 to selxm and selz1 toselzm.

The temperature detector 20 is inputted with the voltage VRFV and thereference voltage vref outputted from the reference level circuit 10.The temperature detector 20 compares the reference voltage vref with thecorresponding monitor voltage vmoni with the chip temperature (thetemperature of the DRAM cell) and then outputs the temperature detectionsignal detz that indicates the compared result to the detectiontemperature latch circuit 30.

The detection temperature latch circuit 30 is a combination of latchcircuits, the number of which is m, which are respectively inputted withtemperature detection signals detz outputted from the temperaturedetector 20. The detection temperature latch circuits 30 are inputtedwith the detection temperature selection signals selz1 to selzmoutputted from the detection temperature selector 40. The detectiontemperature latch circuit 30 reads the state of the temperaturedetection signal detz outputted from the temperature detector 20 andoutputs the detection temperature latch signal latz to the frequencydividing number selector 50, if the latch circuit is selected by thedetection temperature selection signal selz, while the detectiontemperature latch circuits 30 continue to output the same detectiontemperature latch signal latz as the signal given in the previousselection if those latch circuits are not selected by the detectiontemperature selection signal selz.

The detection temperature selector 40 is a combination of selectors, thenumber of which is m, which number corresponds with the number of thedetection temperature latch circuits 30. The detection temperatureselector 40 is inputted with the detection temperature latch signallatzn outputted from the corresponding detection temperature latchcircuit as well as the detection temperature latch signals latzn−1 andlatzn+1 outputted from the detection temperature latch circuits adjacentto the corresponding latch circuit. Further, each detection temperatureselector 40 is inputted with the temperature detection signal detzoutputted from the temperature detection circuit 20. The detectiontemperature selectors 40 output the detection temperature selectionsignals selx1 to selxm and selz1 to selzm according to the inputteddetection temperature latch signals latz1 to latzm and the temperaturedetection signal detz.

The frequency dividing number selector 50 is inputted with the detectiontemperature latch signals latz1 to latzm outputted from the detectiontemperature latch circuits 30. The frequency dividing number selector 50selects the frequency dividing number of a divider (not shown) accordingto the inputted detection temperature latch signals latz1 to latzm.

The frequency divider controller 60 controls the frequency divider sothat the frequency dividing number may be the number selected by thefrequency dividing number selector 50. The frequency divider outputsrefresh request signals of various intervals under the control of thefrequency divider controller 60.

FIG. 3 illustrates relation between dependency of a data holding timeupon a temperature and a refresh interval in a DRAM cell realized by thesystem shown in FIG. 2. A waveform W1 of FIG. 3 shows a temperaturedependency of a data holding time in the DRAM cell. A waveform W2 showsan interval between a refresh operation of the DRAM cell. In addition, atime on an axis of ordinance is denotes on a log scale.

As shown by the waveform W1, the DRAM cell has a longer data holdingtime as the temperature becomes lower. In the system of FIG. 2, as shownby the waveform W2, a plurality of detection temperatures (referencetemperatures) Tth1 to Tth6 are provided (in the case that m of FIG. 2 is6). The interval between the refresh operation is specified dependingupon if the chip temperature is lower or higher than each of thesedetection temperatures Tth1 to Tth6.

The detection temperatures Tth1 to Tth6 correspond with the referencevoltages vref outputted from the reference level circuit 10 shown inFIG. 2. That is, the interval between the refresh operation is changeddepending upon if the chip temperature signal is higher or lower thaneach of the reference voltages vref (detection temperatures Tth1 toTth6). By providing a plurality of detection temperatures Tth1 to Tth6and changing the interval between the refresh operation according tothose detection temperatures, the system shown in FIG. 2 makes itpossible to reduce the interval between the data holding time and theinterval between the refresh operation in the DRAM cell, therebyreducing the power consumption.

In turn, the description will be oriented to the detailed blocks of thesystem arrangement shown in FIG. 2.

FIG. 4 shows the detailed blocks of the refresh interval control to beexecuted by the semiconductor memory device shown in FIG. 2. FIG. 4illustrates the reference level circuit 10, the temperature detector 20,m detection temperature latch circuits 30-1 to 30-m, and m detectiontemperature selectors 40-1 to 40-m. The frequency dividing numberselector 50 and the frequency divider controller 60 shown in FIG. 2 arenot shown in FIG. 4.

The detection temperature selectors 40-1 to 40-m output to the referencelevel circuit 10, the detection temperature selection signals selx1 toselxm and selz1 to selzm to be used for selecting the detectiontemperatures (corresponding with the reference voltage vref) having beendescribed in FIG. 3 and output the detection temperature selectionsignals selz1 to selzm to the detection temperature latch circuits 30-1to 30-m respectively.

The detection temperature selectors 40-1 to 40-m output the detectiontemperature selection signals selx1 to selxm and selz1 to selzm so thatthe next reference voltage vref may be selected depending upon whetheror not the chip temperature signal is higher than the currently selectedreference voltage vref (corresponding with the detection temperature).For example, when the chip temperature is lower than the correspondingdetection temperature with the currently selected reference voltagevref, the detection temperature selectors 40-1 to 40-m output thedetection temperature selection signals selx1 to selxm and selz1 toselzm so that the corresponding reference voltage vref with thedetection temperature being lower by one temperature step may beselected. On the contrary, when the chip temperature is higher than thecorresponding detection temperature with the currently selectedreference voltage vref, the detection temperature selectors 40-1 to 40-moutput the detection temperature selection signals selx1 to selxm andselz1 to selzm so that the corresponding reference voltage vref with thedetection temperature being higher by one temperature step may beselected. The detection temperature selectors 40-1 to 40-m are arrangedto output the detection temperature selection signals selx1 to selxm andselz1 to selzm according to the supply voltage vii, the detectiontemperature latch signals latz1 to latzm, the temperature detectionsignal detz outputted from the temperature detector 20, and the groundvoltage vss. The detection temperature selectors 40-1 to 40-m areprovided to correspond with m detection temperatures, respectively. Thedetection temperature selector 40-1 corresponds with the lowestdetection temperature and the detection temperature selector 40-mcorresponds with the highest detection temperature.

The reference level circuit 10 operates to output to the temperaturedetector 20 the m reference voltages according to the detectiontemperature selection signals selx1 to selxm and selz1 to selzm. Forexample, when the reference level circuit 10 is inputted with thedetection temperature selection signal selx1 at the L level and thedetection temperature selection signal selz1 at the H level, thereference level circuit 10 outputs the highest reference voltage vref.On the contrary, when the reference level circuit 10 is inputted withthe detection temperature selection signal selx2 at the L level and thedetection temperature selection signal selz2 at the H level, thereference level circuit 10 outputs the next highest reference voltagevref to the foregoing reference voltage vref. When the reference levelcircuit 10 is inputted with the detection temperature selection signalselxm at the L level and the detection temperature selection signalselzm at the H level, the reference level circuit 10 outputs the lowestreference voltage vref.

The temperature detector 20 compares the reference voltage vrefoutputted from the reference level circuit 10, that is, the selecteddetection temperature with the temperature of the chip and then outputsthe compared result, that is, the temperature detection signal detz tothe detection temperature latch circuits 30-1 to 30-m and the detectiontemperature selectors 40-1 to 40-m. For example, when the chiptemperature is lower than the selected detection temperature, thetemperature detector 20 outputs the temperature detection signal detz atthe L level. On the contrary, when the chip temperature is higher thanthe selected detection temperature, the temperature detector 20 outputsthe temperature detection signal detz at the H level. The detectiontemperature to be selected next is determined on the state of thistemperature detection signal detz. For example, when the temperaturedetector 20 outputs the temperature detection signal detz at the Llevel, the detection temperature being lower by one temperature stepthan the currently selected detection temperature is selected, whilewhen the temperature detector 20 outputs the temperature detectionsignal detz at the H level, the detection temperature being higher byone temperature step than the currently selected detection temperatureis selected.

The detection temperature latch circuits 30-1 to 30-m are inputted withthe temperature detection signal detz outputted from the temperaturedetector 20 and the detection temperature selection signals selz1 toselzm outputted from the detection temperature selectors 40-1 to 40-mrespectively. When the detection temperature selection signals selz1 toselzm at the H level are inputted, the detection temperature latchcircuits 30-1 to 30-m accept the temperature detection signal detzoutputted from the temperature detection circuit 20 and thereby outputthe detection temperature latch signals latz1 to latzm. When thedetection temperature selection signals selz1 to selzm at the L levelare inputted, the detection temperature latch circuits 30-1 to 30-moutput the detection temperature latch signals latz1 to latzm derivedwhen the signals selz1 to selzm were at the H level in the previoustime. In addition, like the detection temperature selectors 40-1 to40-m, the detection temperature latch circuits 30-1 to 30-m correspondwith m detection temperatures respectively. Further, the detectiontemperature latch circuits 30-1 to 30-m operate to latch the temperaturedetection signal detz being inverted.

In the meantime, the system is arranged so that when the power is turnedon, the highest detection temperature may be selected for making theinterval between the refresh operation shortest. Hence, when the systemis started like a turn-on, all the detection temperature latch circuits30-1 to 30-m output the detection temperature latch signals latz1 tolatzm at the L level and the detection temperature selector 40-m outputsthe detection temperature selection signal selzm at the H level and thedetection temperature selection signal selxm at the L level. (In theother selectors, conversely, the signal selzm is at the L level and thesignal selxm is at the H level). This causes the detection temperaturelatch circuit 30-m to latch the temperature detection signal detz, whichcorresponds to the result of comparison between the highest detectiontemperature and the chip temperature, the result being outputted fromthe temperature detector 20. When the chip temperature is lower than thecurrent detection temperature, the temperature detector 20 is caused tooutput the temperature detection signal detz at the L level for loweringthe current detection temperature by one step. The detection temperaturelatch circuit 30-m is caused to output the detection temperature latchsignal latzm at the H level that is a reversed signal of the temperaturedetection signal detz at the L level.

When the detection temperature 30-1 to 30-m latch circuits output thedetection temperature latch signals latz1 to latzm−1 at the L level andthe detection temperature latch signal latzm at the H level, thedetection temperature selector 40-m-1 is activated (to be discussedlater in detail). This causes the next highest detection temperature(reference voltage vref) to be selected. Further, the detectiontemperature selector 40-m-1 outputs the detection temperature selectionsignal selzm−1 the H level and the detection temperature latch circuit30-m-1 latches the temperature detection signal detz, which correspondsto the result of comparison between the next highest detectiontemperature and the chip temperature, the result being outputted fromthe temperature detector 20. When the chip temperature is lower than thecurrent detection temperature, the temperature detection signal detz atthe L level is outputted by the temperature detector 20, for loweringthe current detection temperature by one step, and the detectiontemperature latch circuit 30-m-1 outputs the detection temperature latchsignal latzm−1 at the H level. The output of the detection temperaturelatch signals latz1 to latzm-2 at the L level and the detectiontemperature latch signals latzm−1 and latzm at the H level causes thedetection temperature selector 40-m-2 to be activated (to be discussedlater in detail). Similarly, when the chip temperature is lower than thedetection temperature, the border between the H level and the L level ofthe detection temperature latch signal latz1 to latzm is shifted upwardin FIG. 4 from the detection temperature latch signal latzm-2 tolatzm-3, . . . , which results in making the area at the H level larger.On the other hand, when the chip temperature is higher than thedetection temperature, the border between the H level and the L level ofthe detection temperature latch signal latz1 to latzm is shifteddownward in FIG. 4, which results in making the area at the H levelsmaller. This causes the detection temperature to be varied.

In turn, the description will be oriented to each circuit shown in FIG.4. At first, the detailed arrangement of the reference level circuit 10will be described.

FIG. 5 shows the details of the reference level circuit. As shown, thereference level circuit 10 is composed of (m+1) resistors R1 to Rm+1, mNMOS transistors Mz1 to Mzm, m PMOS transistors Mx1 to Mxm, and an NMOStransistor M11.

The resistors R1 to Rm+1 and the transistor M11 are connected in seriesbetween the voltage VRFV, which does not depend upon the variations ofthe temperature and the power supply, and the ground. The gate of thetransistor M11 is inputted with a temperature detection enable signaldetenz (to be discussed below) though the signal is not shown. When thegate of the transistor M11 is inputted with the enable signal detenz atthe H level, the voltage VRFV is divided by the resistors R1 to Rm+1.

The transistors Mz1 to Mzm and Mx1 to Mxm compose the transfer gate. Thegates of the transistors Mz1 to Mxm are inputted with the detectiontemperature selection signals selz1 to selzm and the gates of thetransistors Mz1 to Mxm are inputted with the detection temperatureselection signals selx1 to selxm.

Each transfer gate composed of the transistors Mz1 to Mzm and Mx1 to Mxmis inputted with the voltage VRFV divided by the resistors R1 to Rm+1.When the transfer gate is inputted with one of the detection temperatureselection signals selz1 to selzm at the H level and one of the detectiontemperature selection signals selx1 to selxm at the L level, thetransfer gate selected by the detection temperature selection signalsoutputs the voltage VRFV divided by the resistors R1 to Rm+1 as thereference voltage vref.

In turn, the temperature detector 20 will be described in detail.

FIG. 6 shows the details of the temperature detector. As shown, thetemperature detector 20 is composed of inverters 21 to 23, NAND circuits24 to 27, PMOS transistors M21 to M25, NMOS transistors M26 to M28, aresistor R21, and a diode D1.

The transistor M21, the resistor R21 and the diode D1 are connected inseries between the voltage VRFV, which does not depend upon thevariations of the temperature and the power supply, and the ground. Thegate of the transistor M21 is inputted with the temperature detectionenable signal detenz through the inverter 21. When the inverter 21 isinputted with the temperature detection enable signal detenz at the Hlevel, the transistor M21 is turned on, so that the voltage VRFV may beapplied into the diode D1 through the resistor R21.

The threshold value of the diode D1 is varied depending upon thetemperature. Concretely, when the chip temperature becomes higher, thethreshold value becomes lower. That is, the voltage generated in theanode of the diode D1 represents the chip temperature and is inputted asthe monitor voltage vmoni into the gate of the transistor M26.

The transistors M23, M24, M26, M27 and M28 compose a differentialamplifier. The gates of the transistors M26 and M27 are inputted withthe monitor voltage vmoni and the reference voltage vref. Thedifferential amplifier outputs the result of comparison between themonitor voltage vmoni and the reference voltage vref to the inverter 22.When the monitor voltage vmoni is higher than the reference voltagevref, that is, when the chip temperature is lower than the detectiontemperature, the inverter 22 is caused to output the signal at the Hlevel. On the contrary, when the monitor voltage vmoni is lower than thereference voltage vref, that is, when the chip temperature is higherthan the detection temperature, the inverter 22 is caused to output thesignal at the L level.

The gates of the transistors M22, M25 and M28 are inputted with thetemperature detection enable signal detenz. When the enable signal is atthe H level, the transistors M22 and M25 are turned off and thetransistor M28 is turned on, which causes the differential amplifier tobe started. When the enable signal is at the L level, the transistorsM22 and M25 are turned on and the drains of the transistors M26 and M27are fixed to the supply voltage. Further, the transistor M28 is turnedoff, which causes the differential amplifier to be inoperative.

The inverter 23 and the NAND circuits 24 to 27 compose the latchcircuit. The NAND circuit 24 is inputted with a pulse signal pulsez0 (tobe discussed below). The NAND circuit 27 is inputted with a startersignal sttx. The latch circuit composed of the inverter 23 and the NANDcircuits 24 to 27 inverts the signal outputted from the inverter 22 andlatches the inverted signal in response to the pulse signal pulsez0 atthe H level and the starter signal sttx, and then outputs the latchedsignal as the temperature detection signal detz. Hence, when the chiptemperature is lower than the detection temperature, the latch circuitoutputs the temperature detection signal detz at the L level. On thecontrary, when the chip temperature is higher than the detectiontemperature, the latch circuit outputs the temperature detection signaldetz at the H level. In the start time, the temperature detection signaldetz is made to be at the H level in response to the starter signal sttxat the L level.

In turn, the detection temperature latch circuits 30-1 to 30-m will bedescribed in detail.

FIG. 7 shows the details of the detection temperature latch circuit.Each of the detection temperature latch circuits 30-1 to 30-m has thesame circuit arrangement. Hence, the description will be oriented onlyto the latch circuit 30-1.

As shown in FIG. 7, the latch circuit 30-1 is composed of NAND circuits31, 34 to 37 and inverters 32 and 33. The inverters 33 and the NANDcircuits 34 to 37 compose the latch circuit. The NAND circuit 34 of thislatch circuit is inputted with the pulse signal pulsez1 and thedetection temperature selection signal selz1 through the NAND circuit 31and the inverter 32. The NAND circuit 35 is inputted with the startersignal sttx. The inverter 33 is inputted with the temperature detectionsignal detz. When the latch circuit is inputted with the pulse signalpulsez1 at the H level, the detection temperature selection signal selz1and the starter signal sttx, the latch circuit inverts the temperaturedetection signal detz and latches the inverted signal, and then outputsthe inverted signal as the detection temperature latch signal latz1. Thelatch circuits 30-2 to 30-m are inputted with the detection temperatureselection signals selz2 to selzm respectively and then output thedetection temperature latch signals latz2 to latzm. Further, in thestart time, the latch circuits 30-1 to 30-m are inputted with thestarter signal sttx at the L level and then output the detectiontemperature latch signals latz1 to latzm at the L level.

Next, the detection temperature selectors 40-1 to 40-m will be describedin detail.

FIG. 8 shows the details of the detection temperature selector. The n-thselector 40 n of m selectors is shown in FIG. 8. As shown, the detectiontemperature selector 40 n is composed of inverters 41 to 43, 45, NANDcircuits 44, 46 to 49, PMOS transistors M31 and M33, and NMOStransistors M32 and M34.

The inverters 41 to 43, the PMOS transistors M31 and M33, the NMOStransistors M32 and M33, and the NAND circuit 44 are caused to output toa node N1 a signal of a predetermined state according to the signalstates of the temperature detection signal detz and the detectiontemperature latch signals latzn−1, latzn and latzn+1. The inverter 45and the NAND circuits 46 to 49 latch the signal state of the node N1 andoutput the detection temperature selection signal selxn to selznaccording to the latched signal. That is, the detection temperatureselector 40 n is caused to output the detection temperature selectionsignals selzn and selxn according to the temperature detection signaldetz, the detection temperature latch signal latzn−1 inputted into theselector 40 n−1 adjacent to the selector 40 n, the detection temperaturelatch signal latzn inputted for the selector 40 n itself, and thedetection temperature latch signal latzn+1 inputted into the selector 40n+1 adjacent to the selector 40 n.

Herein, the description will be oriented to relation of the signal stateamong the temperature detection signal detz, the detection temperaturelatch signals latzn−1, latzn and latzn+1, and the node N1.

FIG. 9 shows the relation of a signal state among the temperaturedetection signal, the detection temperature latch signal, and the nodeN1. As shown, when the temperature detection signal detz is zero (0), ifthe detection temperature latch signals latzn−1, latzn and latzn+1 are 0(L level), 0 and 1 (H level), the node N1 is 0 and the detectiontemperature selection signals selzn and selxn are 1 and 0. In the othercombination of the detection temperature latch signals latzn−1, latznand latzn+1, the node N1 is 1 and the detection temperature selectionsignals selzn and selxn are 0 and 1. That is, in the case of outputtingthe temperature detection signal detz of 0, the detection temperatureselector 40 n being inputted with the detection temperature latchsignals latzn−1, latzn and latzn+1 of 0, 0 and 1 is activated so as toselect the corresponding detection temperatures (to output the detectiontemperature selection signals selzn and selxn of 1 and 0).

On the other hand, in a case that the temperature detection signal detzis 1, if the detection temperature latch signals latzn−1, latzn andlatzn+1 are 0, 1 and 1 as shown, the node N1 is 0 and the detectiontemperature selection signals selzn and selxn are 1 and 0. In the othercombination of the detection temperature latch signals latzn−1, latznand latzn+1, the node N1 is 1 and the detection temperature selectionsignals selzn and selxn are 0 and 1. That is, in the case of outputtingthe temperature detection signal detz of 1, the detection temperatureselector 40 n being inputted with the detection temperature latchsignals latzn−1, latzn and latzn+1 of 0, 1 and 1 is activated so as toselect the corresponding detection temperatures.

That is, the corresponding detection temperature selector 40 k & 401with one of the detection temperature latch signals latzk and latz1,adjacent to the border between the L level area and the H level areainto which each of the detection temperature latch signals latz1 tolatzm is separated, is selected according to the state of thetemperature detection signal detz. This causes the border between the Llevel and the H level of each of the detection temperature latch signalslatz1 to latzm to be moved one by one.

Turning back to the description about FIG. 8, the NAND circuits 46 and48 composing the latch circuit are inputted with the pulse signalpulsez2. The NAND circuit 47 composing the latch circuit is inputtedwith the starter set signal sttsetx. The NAND circuit 49 composing thelatch circuit is inputted with the starter reset signal sttrstx. Whenthe pulse signal pulsez2, the starter set signal sttsetx and the starterreset signal sttrstx are at the H level, the latch circuit latches thesignal of the node N1 and then outputs the signal. In the start time, ineach of the detection temperature selectors 40-1 to 40-m, the starterset signal sttsetx is at the H level and the starter reset signalsttrstx is at the L level. This causes the detection temperatureselectors 40-1 to 40-m to output the detection temperature selectionsignals selz1 to selzm−1 at the L level and the detection temperatureselection signals selx1 to selxm−1 at the H level. Further, in thedetection temperature selector 40-m, the starter set signal sttsetx isat the L level and the starter reset signal sttrstx is at the H level.This causes the detection temperature selector 40-m to output thedetection temperature selection signal selzm at the H level and thedetection temperature selection signal selxm at the L level.

The corresponding portions with the detection temperature latch signalslatzn−1, latzn and latzn+1 of the detection temperature selector 40-1are inputted with the ground voltage vss, the voltage vss and thedetection temperature latch signal latz2 respectively. Since there islocated no corresponding detection temperature selector with the lowerdetection temperature than that of the detection temperature selector40-1, the portions of the detection temperature latch signals latzn−1and latzn are forcibly put into the L level. Further, the correspondingportions of the detection temperature selector 40-m with the detectiontemperature latch signals latzn−1, latzn and latzn+1 are inputted withthe detection temperature latch signals latzm−1, the supply voltage Viiand the voltage Vii respectively. Since there is located nocorresponding detection temperature selector with the higher detectiontemperature than that of the detection temperature selector 40-m, theportions of the detection temperature latch signals latzn and latzn+1are forcibly put into the H level.

In turn, the description will be oriented to the control signals of thetemperature detection enable signal detenz and the pulse signals pulsez0to pulsez2.

FIG. 10 is a circuit diagram showing a control signal generator. Asshown, the control signal generator includes NOR circuits 51 and 52,inverters 53 to 56 and delay circuits 57 and 58.

One inputs of the NOR circuits 51 and 52 are inputted with a refreshstatus signal refz that is a periodic pulse signal. The other input ofthe NOR circuit 51 is inputted with the refresh status signal refzthrough the inverters 53 to 55 located at three stages. The other inputof the NOR circuit 52 is inputted with the refresh status signal refzthrough the inverters 53 to 56 located at four stages. These signalscause the NOR circuit 51 to output the pulse signal pulsez0 when therefresh status signal refz is shifted from the H level to the L level.Further, while at least one of the refresh status signal refz and thepulse signal pulsez0 is at the H level, the temperature detection enablesignal detenz at the H level is outputted from the NOR circuit 52. Thepulse signal pulsez0 is delayed by the delay circuits 57 and 58 forgenerating the pulse signals pulsez1 and pulsez2. In addition, anysignal may be inputted into one of the NOR circuits 51 and 52 if it is aperiodic signal. The refresh status signal refz is not required to beinputted into one of the NOR circuits 51 and 52.

Hereafter, the operation shown in FIG. 4 will be described. For example,it is assumed that the detection temperature latch signals latz2, latz3,latz4, latz5 and latz6 are at the L, L, L, H and H levels respectivelyand the detection temperature selection signal selz4 is at the H level.Assuming that the temperature detection signal detz is at the L level,that is, the detection temperature is required to be lower by one step,the corresponding detection temperature latch circuit 30-4 with thedetection temperature selection signal selz4 is caused to output thereversed one of the temperature detection signal detz at the L level,that is, the detection temperature latch signal latz4 at the H level.This causes the detection temperature latch signals latz2, latz3, latz4,latz5 and latz6 to be at the L, L, H, H and H levels respectively. As aresult, the temperature detection signal detz is put into the L level.Hence, the detection temperature selection signal selz3 of n=3 is putinto the H level, in which signal selz3 of n=3 the detection temperaturelatch signals latzn−1, latzn and latzn+1 are at the L, L and H levels(0, 0, 1). The detection temperature selection signal selz3 at the Hlevel causes the reference level circuit 10 to output the correspondingreference voltage vref with the detection temperature being lower by onestep.

As another example, it is assumed that the detection temperature latchsignals latz2, latz3, latz4, latz5 and latz6 are at the L, L, H, H and Hlevels respectively and the detection temperature selection signal selz4is at the H level. Assuming that the temperature detection signal detzis at the H level, that is, the detection temperature is required to behigher by one step, the corresponding detection temperature latchcircuit 30-4 with the detection temperature selection signal selz4 iscaused to output the reversed one of the temperature detection signaldetz at the H level, that is, the detection temperature latch signallatz4 at the L level, thereby causing the detection temperature latchsignals latz2, latz3, latz4, latz5 and latz6 to be put into the L, L, L,H and H levels respectively. As a result, the temperature detectionsignal detz is at the H level. Hence, the detection temperatureselection signal selz5 of n=5 is put into the H level, in which signalselz5 of n=5 the detection temperature latch signals latzn−1, latzn andlatzn+1 are at the L, H and H levels (0, 1, 1). This detectiontemperature selection signal selz5 at the H level causes the referencelevel circuit 10 to output the corresponding reference voltage vref withthe detection temperature being higher by one step.

In turn, the description will be oriented to the operation shown in FIG.4 with reference to the timing chart.

FIG. 11 is a timing chart of the arrangement shown in FIG. 4. It isassumed that the detection temperature selected by the detectiontemperature selection signal selz3 is 60 degrees, the detectiontemperature selected by the detection temperature selection signal selz4is 70 degrees, the detection temperature selected by the detectiontemperature selection signal selz5 is 80 degrees, and the chiptemperature is 65 degrees.

In the interval S1 shown in FIG. 11, when the temperature detectionenable signal detenz is put into the H level, the reference levelcircuit 10 is enabled. Since the detection temperature selection signalselz5 is at the H level, the reference level circuit 10 outputs thecorresponding reference voltage vref with the detection temperature of80 degrees.

The temperature detector 20 is also enabled when the enable signaldetenz is at the H level. The temperature detector 20 compares thecorresponding reference voltage vref with the detection temperature of80 degrees with the corresponding monitor voltage vmoni with the chiptemperature and then latches the compared result, that is, thetemperature detection signal detz by an input of the pulse signalplusez0. Since the chip temperature is 65 degrees, and the selecteddetection temperature is 80 degrees, the temperature detector 20 outputsthe temperature detection signal detz at the L level.

The temperature detection signal detz at the L level is inverted andlatched by the detection temperature latch circuit 30-5 when thedetection temperature selection signal selz 5 is at the H level. Thiscauses the detection temperature latch signal latz5 at the H level to beoutputted, so that the detection temperature latch signals latz3, latz4and latz5 are put into the L, the L and the H levels respectively.

Since the temperature detection signal detz is at the L level, thedetection temperature selector 40-4, by which the detection temperaturelatch signals latzn−1, latzn and latzn+1 are put into the L, the L andthe H levels respectively, is activated. The detection temperatureselector 40-4 is caused to output the detection temperature selectionsignal selz4 at the H level by an input of the pulse signal pulsez2.This causes the detection temperature to be switched from 80 degrees to70 degrees.

In the interval S2 shown in FIG. 11, when the temperature detectionenable signal detenz is put into the H level, the reference levelcircuit 10 is enabled. Currently, since the detection temperatureselection signal selz4 is at the H level, the reference level circuit 10outputs the corresponding reference voltage vref with the detectiontemperature of 70 degrees.

The temperature detector 20 is also enabled when the temperaturedetection enable signal detenz is at the H level. The temperaturedetector 20 compares the corresponding reference voltage vref with thedetection temperature of 70 degrees with the corresponding monitorvoltage vmoni with the chip temperature and then latches the comparedresult, that is, the temperature detection signal detz by an input ofthe pulse signal plusez0. Further, since the chip temperature is 65degrees and the selected detection temperature is 70 degrees, thetemperature detector 20 outputs the temperature detection signal detz atthe L level.

When the detection temperature selection signal selz4 is at the H level,the temperature detection signal detz at the L level is inverted andlatched by the detection temperature latch circuit 30-4. This causes thedetection temperature latch signal latz4 at the H level to be outputted,so that the detection temperature latch signals latz3, latz4 and latz5are put into the L, the H and the H levels respectively.

Since the temperature detection signal detz is at the L level, thedetection temperature selector 40-3, by which the detection temperaturelatch signals latzn−1, latzn and latzn+1 are put into the L, the L andthe H levels, is activated. The detection temperature selector 40-3outputs the detection temperature selection signal selz3 at the H levelby an input of the pulse signal pulsez2. This causes the detectiontemperature to be switched from 70 to 60 degrees.

In the interval S3 shown in FIG. 11, when the temperature detectionenable signal detenz is put into the H level, the reference levelcircuit 10 is enabled. Currently, since the detection temperatureselection signal selz3 is at the H level, the reference level circuit 10outputs the corresponding reference voltage vref with the detectiontemperature of 60 degrees.

The temperature detector 20 is also enabled when the enable signaldetenz is at the H level. The temperature detector 20 compares thecorresponding reference voltage vref with the detection temperature of60 degrees with the corresponding monitor voltage vmoni with the chiptemperature and then latches the compared result, that is, thetemperature detection signal detz by an input of the pulse signalplusez0. Further, since the chip temperature is 65 degrees and theselected detection temperature is 60 degrees, the temperature detector20 outputs the temperature detection signal detz at the H level.

Since the detection temperature selection signal selz3 is at the Hlevel, the temperature detection signal detz at the H level is reversedand latched by the detection temperature latch circuit 30-3. This causesthe detection temperature latch signal latz3 at the H level to beoutputted, which results in putting the detection latch signals latz3,latz4 and latz5 into the L, the H an the H levels, respectively.

Since the temperature detection signal detz is at the H level, thedetection temperature selector 40-4, by which the detection temperaturelatch signals latzn−1, latzn and latzn+1 are put into the L, the H andthe H levels, is activated. The detection temperature selector 40-4outputs the detection temperature selection signal selz4 at the H levelby an input of the pulse signal pulsez2. This causes the detectiontemperature to be switched from 60 to 70 degrees.

In the terminal S4 shown in FIG. 11, when the temperature detectionenable signal detenz is put into the H level, the reference levelcircuit 10 is enabled. Currently, since the detection temperatureselection signal selz4 is at the H level, the reference level circuit 10outputs the corresponding reference voltage vref with the detectiontemperature of 70 degrees.

The temperature detector 20 is also enabled when the enable signaldetenz is at the H level. The temperature detector 20 compares thecorresponding reference voltage vref with the detection temperature of70 degrees with the corresponding monitor voltage vmoni with the chiptemperature and then latches the compared result, that is, thetemperature detection signal detz by an input of the pulse signalplusez0. Further, since the chip temperature is 65 degrees and theselected detection temperature is 70 degrees, the temperature detector20 outputs the temperature detection signal detz at the L level.

The temperature detection signal detz at the L level is inverted andlatched by the detection temperature latch circuit 30-4 when thedetection temperature selection signal selz4 is at the H level. Thiscauses the detection temperature latch signal latz4 at the H level to beoutputted, so that the detection temperature latch signals latz3, latz4and latz5 are put into the L, the H and the H levels respectively.

Since the temperature detection signal detz is at the L level, thedetection temperature selector 40-3, by which the detection temperaturelatch signals latzn−1, latzn and latzn+1 are put into the L, the L andthe H levels respectively, is activated. The detection temperatureselector 40-3 outputs the detection temperature selection signal selz3at the H level by an input of the pulse signal pulsez2. This causes thedetection temperature to be switched from 70 degrees to 60 degrees.Later, if the chip temperature stays at 65 degrees, the operations ofthe intervals S3 and S4 are repeated so that the detection temperatureis switched between 60 degrees and 70 degrees.

As described above, the semiconductor memory device is arranged tochange the detection temperature to be compared with the actual chiptemperature according to the compared result and minutely change arefresh interval according to the result of comparison between thechanged detection temperature and the chip temperature. This arrangementmakes it possible to reduce the interval between the data holding timeand the refresh interval, thereby being able to lower the powerconsumption.

The semiconductor memory device according to the present invention isarranged to change the reference temperature to be compared with thedetected temperature according to the compared result and minutelychange the refresh interval according to the result of comparisonbetween the changed reference temperature and the detected temperature.This arrangement makes it possible to reduce the interval between thedata holding time and the refresh interval, thereby being able to lowerthe power consumption.

The foregoing is considered as illustrative only of the principles ofthe present invention. Further, since numerous modifications and changeswill readily occur to those skilled in the art, it is not desired tolimit the invention to the exact construction and applications shown anddescribed, and accordingly, all suitable modifications and equivalentsmay be regarded as falling within the scope of the invention in theappended claims and their equivalents.

1. A semiconductor memory device arranged to perform a refreshingoperation for holding data, comprising: a temperature detector unit foroutputting a temperature signal; a reference temperature signal outputunit for outputting reference temperature signals according to aselection signal, said reference temperature signals corresponding to aplurality of difference reference temperatures to be compared with saidtemperature; a temperature comparator unit for comparing saidtemperature with said reference temperature through said temperaturesignal and said reference temperature signal; a selection signal outputunit for outputting said selection signal according to said comparedresult; and a refresh interval control unit for changing an intervalbetween said refresh operation according to said compared result.
 2. Thesemiconductor memory device according to claim 1, wherein said selectionsignal output unit includes a plurality of latch sections providedrespectively for said reference temperatures and being selected by saidselection signal, for latching said compared result, and a plurality ofreference temperature selection sections provided respectively for saidreference temperatures, each of said reference temperature selectionsections being caused to output said selection signal according to saidcompared result latched by each of said latch units and said comparedresult of said temperature comparator unit.
 3. The semiconductor memorydevice according to claim 2, wherein said reference temperatureselection units are inputted with said compared result of thecorresponding latch section with said reference temperature, saidcompared result of the corresponding latch section with said referencetemperature being lower by one temperature step, and said comparedresult of the corresponding latch section with said referencetemperature being higher by one temperature step.
 4. The semiconductormemory device according to claim 2, wherein said refresh intervalcontrol unit operates to change an interval between said refreshoperation according to said compared result latched by said latchsection.
 5. The semiconductor memory device according to claim 1,wherein if said temperature is lower than said reference temperature,said selection signal output unit outputs said selection signal so as toselect the corresponding reference temperature signal with saidreference temperature being lower by one temperature step, while if saidtemperature is higher than said reference temperature, said selectionsignal output unit outputs said selection signal so as to select thecorresponding reference temperature signal with said referencetemperature being higher by one temperature step.
 6. The semiconductormemory device according to claim 1, wherein said refresh intervalcontrol unit makes said refresh interval longer as said referencetemperature being currently compared is lower and makes said refreshinterval shorter as said reference temperature is higher.
 7. Thesemiconductor memory device according to claim 1, wherein saidtemperature detection unit outputs said temperature signal through theeffect of a threshold value voltage of a diode having a temperaturedependency.
 8. The semiconductor memory device according to claim 1,wherein said reference temperature signal output unit divides a constantvoltage and outputs said divided voltage as said reference temperaturesignal.